25 citations · 32 across the 8 of their papers we have counts for
4 papers · 1 filter
Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation
Leonard Deuschle, Jiang Cao, Alexandros Nikolaos Ziogas +4
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller…
Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations
Jonathan Backman, Youseung Lee, Mathieu Luisier
This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density…
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Mathieu Luisier, Cedric Klinkert, Sara Fiore +4
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D…
Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Youseung Lee, Sara Fiore, Mathieu Luisier
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 u…