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Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors
SungGeun Kim, Mathieu Luisier, Timothy B. Boykin +1
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS)…
Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires
Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck
The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtaine…
Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires
Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck
Engineering of the cross-section shape and size of ultra-scaled Si nanowires (SiNWs) provides an attractive way for tuning their structural properties. The acoustic and optical pho…
Distributed NEGF Algorithms for the Simulation of Nanoelectronic Devices with Scattering
Stephen Cauley, Mathieu Luisier, Venkataramanan Balakrishnan +2
Through the Non-Equilibrium Green's Function (NEGF) formalism, quantum-scale device simulation can be performed with the inclusion of electron-phonon scattering. However, the simul…
Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons
Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck +4
Accurate modeling of the pi-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic mo…