On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
arXiv:2008.04144 · doi:10.1038/s41928-020-00529-x
Abstract
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, like for example transition-metal dichalcogenides or black phosphorus. The requirements for the gate insulator are arguably even more challenging and difficult to meet. In particular the combination of insulator to semiconductor which forms the central element of the metal oxide semiconductor field effect transistor (MOSFET) has to be of superior quality in order to build competitive devices. At the moment, hexagonal boron nitride (hBN) is the most common two-dimensional insulator and widely considered to be the most promising gate insulator in nanoscaled 2D material-based transistors. Here, we critically assess the material parameters of hBN and conclude that while its properties render hBN an ideal candidate for many applications in 2D nanoelectronics, hBN is most likely not suitable as a gate insulator for ultrascaled CMOS devices.
10 pages, 4 figures
References in corpus (35)
- Van der Waals heterostructures
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Boron nitride substrates for high-quality graphene electronics
- CP2K: An Electronic Structure and Molecular Dynamics Software Package -- Quickstep: Efficient and Accurate Electronic Structure Calculations
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Mobility engineering and metal-insulator transition in monolayer MoS2
- Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Hexagonal boron nitride is an indirect bandgap semiconductor
- The Computational 2D Materials Database: High-Throughput Modeling and Discovery of Atomically Thin Crystals
- Electric field effect in ultrathin black phosphorus
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer
- Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
- High quality sandwiched black phosphorus heterostructure and its quantum oscillations
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
- Huge excitonic effects in layered hexagonal boron nitride
- Effect of high-k environment on charge carrier mobility in graphene
- Electron and Hole Mobilities in Single-Layer WSe2
- Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
- High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors
- Effect of high-K dielectrics on charge transport in graphene
- Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
- Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
- Hall and field-effect mobilities in few layered -WSe field-effect transistors
- Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions
- Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor
- Current crowding mediated large contact noise in graphene field-effect transistors
- Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
- Spin transport in fully hexagonal boron nitride encapsulated graphene
- Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
- Modelling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters
- Thermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors
Cited by in corpus (22)
- 2D Materials for Future Heterogeneous Electronics
- Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
- Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
- Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors
- Mechanisms of Resistive Switching in 2D Monolayer and Multilayer Materials
- Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
- Exploring the structural and optoelectronic properties of natural insulating phlogopite in van der Waals heterostructures
- Phyllosilicates as earth-abundant layered materials for electronics and optoelectronics: Prospects and challenges in their ultrathin limit
- Theoretical insights on structural, electronic and thermoelectric properties of inorganic biphenylene: non-benzenoid Boron nitride
- Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
- Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes
- Thermal boundary conductance of CVD-grown MoS monolayer-on-silica substrate determined by scanning thermal microscopy
- Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
- Anomalous properties of spark plasma sintered boron nitride solids
- Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
- Ab initio property characterisation of thousands of previously unknown 2D materials
- Step-directed Epitaxy of Uni-directional Hexagonal Boron Nitride on Vicinal Ge(110)
- Band structure of molybdenum disulfide: from first principle to analytical band model
- Laser-stimulated photodetachment of electrons from the negatively charged dielectric substrates
- Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
- Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride
- Atomically Thin Amorphous Carbon with an Ultralow Dielectric Constant