activity
20182021
most citedOn the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

366 citations · 366 across the 5 of their papers we have counts for

collaborators

5 papers

cs.ET2021

2022 Roadmap on Neuromorphic Computing and Engineering

Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco +56

Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as sep…

cond-mat.mes-hall2020

Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics

Tian Carey, Adrees Arbab, Luca Anzi +12

Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-d…

physics.app-ph2020★ 366 cited

On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8

Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…

physics.app-ph2019

Visualization of Ion Channels in Membranes using Electrochemical Strain Microscopy

Suran Kim, Chungik Oh, Hongjun Kim +4

Polymer composite electrolytes of Nafion and phosphotungstic acid (PWA) are fabricated and analyzed using electrochemical strain microscopy (ESM) and conductive atomic force micros…

cond-mat.mtrl-sci2018

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Fei Hui, Wenjing Fang, Wei Sun Fang +7

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. grap…