Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
arXiv:1506.05053 · doi:10.1063/1.4930230
Abstract
We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.
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Cited by in corpus (9)
- On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
- Anisotropic thermal transport in bulk hexagonal boron nitride
- Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications
- Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
- Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering
- Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
- Plasmon-assisted resonant tunneling in graphene-based heterostructures
- Quantized electron transport through graphene nanoconstrictions