Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
arXiv:1702.08333 · doi:10.1021/acs.nanolett.6b04374
Abstract
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B-periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.
Accepted for publication in Nano Letters
References in corpus (10)
- 2D materials and van der Waals heterostructures
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Tightly bound excitons in monolayer WSe2
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Hall and field-effect mobilities in few layered -WSe field-effect transistors
- Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
- Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
- A micro-magneto-Raman scattering study of graphene on a bulk graphite substrate
Cited by in corpus (8)
- Optical response of monolayer, few-layer and bulk tungsten disulfide
- Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures
- Roadmap for Photonics with 2D Materials
- Temperature induced giant shift of phonon energy in epitaxial boron nitride layers
- Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between CrGeTe electrodes
- Optical response of WSe-based vertical tunneling junction
- Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres
- Sub-diffraction-resolved spatial distribution of emitting excitons in STM-induced luminescence of 2D semiconductors via Richardson-Lucy deconvolution