Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
arXiv:1702.08333 · doi:10.1021/acs.nanolett.6b04374
Abstract
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B-periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.
arXiv commentAccepted for publication in Nano Letters
References in corpus (27)
- Van der Waals heterostructures
- 2D materials and van der Waals heterostructures
- Field-effect tunneling transistor based on vertical graphene heterostructures
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Tightly bound excitons in monolayer WSe2
- Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
- Resonant tunnelling and negative differential conductance in graphene transistors
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
- Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2
- Atomically thin quantum light emitting diodes
- High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors
- WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
- Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer
- Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe: Landau level degeneracy, effective mass, and negative compressibility
- Hall and field-effect mobilities in few layered -WSe field-effect transistors
- Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
- Magneto-Raman scattering of graphene on graphite: Electronic and phonon excitations
- Electrically pumped single-defect light emitters in WSe
- Resonant tunnelling between the chiral Landau states of twisted graphene lattices
- Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
- Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
- A micro-magneto-Raman scattering study of graphene on a bulk graphite substrate
- Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
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