Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures

Abstract

The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe${}_2$/MoS${}_2$ type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe${}_2$ and MoS${}_2$, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.

arXiv commentaccepted for publication in Nature Communications

References in corpus (29)

• Observation of tightly bound trions in monolayer MoS2
• Excitons in atomically thin transition metal dichalcogenides
• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
• Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
• Determination of band alignment in the single layer MoS2/WSe2 heterojunction
• High-temperature superfluidity with indirect excitons in van der Waals heterostructures
• Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
• Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
• Exciton diffusion and halo effects in monolayer semiconductors
• Magneto-Optics of Exciton Rydberg States in a Monolayer Semiconductor
• Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures
• Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers
• Interfacial Charge Transfer Circumventing Momentum Mismatch at 2D van der Waals Heterojunctions
• Interlayer excitons and Band Alignment in MoS${}_2$/hBN/WSe${}_2$ van der Waals Heterostructures
• Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
• Fundamental Limits of Exciton-Exciton Annihilation for Light Emission in Transition Metal Dichalcogenide Monolayers
• Enabling valley selective exciton scattering in monolayer WSe${}_2$ through upconversion
• Probing the spin-polarized electronic band structure in monolayer transition metal dichalcogenides by optical spectroscopy
• Theory of Two-Dimensional Spatially Indirect Equilibrium Exciton Condensates
• Three-particle Complexes in Two-Dimensional Semiconductors
• Up-conversion injection in Rubrene/Perylene-diimide-heterostructure electroluminescent diodes
• Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
• Many-body effects in nonlinear optical responses of 2D layered semiconductors
• Auger recombination of dark excitons in $\mathrm{W}{\mathrm{S}}_2$ and $\mathrm{WS}{\mathrm{e}}_2$ monolayers
• Semiconducting van der Waals Interfaces as Artificial Semiconductors

Cited by in corpus (18)

• Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
• Exciton diffusion in monolayer semiconductors with suppressed disorder
• Exciton-exciton interaction in transition metal dichalcogenide monolayers and van der Waals heterostructures
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Emergence of highly linearly polarized interlayer exciton emission in MoSe${}_2$/WSe${}_2$ heterobilayers with transfer-induced layer corrugation
• Coupling interlayer excitons to whispering gallery modes in van der Waals heterostructures
• Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors
• Optical signature of cascade transitions between moiré interlayer excitons
• Exciton-polaritons in multilayer WSe${}_2$ in a planar microcavity
• Triplet excitation and electroluminescence from a supramolecular monolayer embedded in a boron nitride tunnel barrier
• Large few-layer hexagonal boron nitride flakes for nonlinear optics
• Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
• Monolayer Semiconductor Auger Detector
• Light sources with bias tunable spectrum based on van der Waals interface transistors
• Role of interface hybridization on induced superconductivity in 1T${}^{\prime }$-WTe${}_2$ and 2H-NbSe${}_2$ heterostructures
• All-optical ultrafast arbitrary rotation of hole orbital qubits with direct phase control
• Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr${}_2$Ge${}_2$Te${}_6$ electrodes
• Understanding the Effects of Dielectric Property, Separation Distance, and Band Alignment on Interlayer Excitons in 2D Hybrid MoS2/WSe2 Heterostructures