Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure

Abstract

We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude absorption in GLs and show that the gain can exceed the losses in metal-metal waveguides at the low end of the THz range. The spectrum of the emitted photons can be tuned by the applied voltage. A weak temperature dependence of the THz gain promotes an effective operation at room temperature.

5 figure, 6 figures

References in corpus (4)

• The electronic properties of graphene
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
• SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

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• Microscopic theory of plasmon-enabled resonant terahertz detection in bilayer graphene