Resonant and non-dissipative tunneling in independently contacted graphene structures

Abstract

The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneling, which appears due to intersection of electron and hole branches of energy spectrum, are described. Dependencies of tunneling current on concentrations in top and bottom graphene layers, which are governed by the voltages applied through independent contacts and gates, are considered for the back- and double-gated structures. The current-voltage characteristics of the back-gated structure are in agreement with the recent experiment [Science 335, 947 (2012)]. For the double-gated structures, the resonant dissipative tunneling causes a ten times enhancement of response which is important for transistor applications.

6 pages, 5 figures

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• Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
• Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure
• Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
• Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity
• Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain
• Emission and amplification of surface plasmons in resonant - tunneling van der Waals heterostructures
• Graphene vertical hot-electron terahertz detectors
• Valley filter from magneto-tunneling between single and bi-layer graphene
• Infrared photodetectors based on graphene van der Waals heterostructures
• Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures
• Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering
• Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
• Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
• Plasmon-assisted resonant tunneling in graphene-based heterostructures
• Magneto-tunnelling spectroscopy of chiral two-dimensional electron systems
• Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As${}_x$P${}_{1-x}$ gate layer
• In-plane Chiral Tunneling and Out-of-plane Valley-polarized Quantum Tunneling in Twisted Graphene Trilayer
• Photon-Induced Suppression of Interlayer Tunneling in Van Der Waals Heterostructures
• Graphene vertical cascade interband terahertz and infrared photodetectors