Valley filter from magneto-tunneling between single and bi-layer graphene
arXiv:1312.6729 · doi:10.1063/1.4866591
Abstract
We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum conservation in a tunneling event and the distinctive chiral nature of charge carriers in the two systems turns out to favor tunneling of electrons from one of the two valleys in the graphene Brillouin zone. Adjusting the field strength enables manipulation of the valley polarization of the current, which reaches its maximum value of 100% concomitantly with a maximum of the tunneling conductance.
11 pages (preprint style), 4 figures, RevTex 4.1, v2: minor changes, to appear in Applied Physics Letters
References in corpus (11)
- The electronic properties of graphene
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Valley filter and valley valve in graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Graphene valley filter using a line defect
- Generation of pure bulk valley current in graphene
- Valley filter in strain engineered graphene
- Generation of valley polarized current in bilayer graphene
- Helical scattering and valleytronics in bilayer graphene
- Spin-polarized tunneling current through a thin film of topological insulator in a parallel magnetic field
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- Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
- Perfect valley filter controlled by Fermi velocity modulation in graphene
- Magnetoelectric effect in bilayer graphene controlled by valley-isospin density
- In-plane Chiral Tunneling and Out-of-plane Valley-polarized Quantum Tunneling in Twisted Graphene Trilayer
- Weyl Semimetal Path to Valley Filtering in Graphene
- Graphene valley polarization as a function of carrier-envelope phase in few-cycle laser pulses and its footprints in harmonic signals