Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
arXiv:1501.04646 · doi:10.1063/1.4914324
Abstract
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.
4 pages, 4 figures; v2 adds Refs. 21-23, along with corresponding modifications to the text
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Cited by in corpus (6)
- Anisotropic thermal transport in bulk hexagonal boron nitride
- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
- Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
- Resonance Effects in Correlated Multilayer Heterostructures
- Dynamic Bandstructure and Capacitance Effects in Scanning Tunneling Spectroscopy of Bilayer Graphene
- Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method