Phonon mediated interlayer conductance in twisted graphene bilayers

Abstract

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode.

5 pages, 3 figures (+ 3 pages, 5 figures supplemental)

References in corpus (12)

• The electronic properties of graphene
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• Flat Bands in Slightly Twisted Bilayer Graphene
• Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
• Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
• Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
• Few layers graphene on 6H-SiC(000-1): an STM study
• Phonon mediated tunneling into graphene

Cited by in corpus (29)

• First-principles method for electron-phonon coupling and electron mobility: Applications to 2D materials
• Observation of Low Energy Raman Modes in Twisted Bilayer Graphene
• Charge inversion and topological phase transition at a twist angle induced van Hove singularity of bilayer graphene
• Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
• Breakdown of the interlayer coherence in twisted bilayer graphene
• Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene
• Generalized high-energy thermionic electron injection at graphene interface
• Transport measurements in twisted bilayer graphene: Electron-phonon coupling and Landau level crossing
• Mis-orientation controlled cross-plane thermoelectricity in twisted bilayer graphene
• Measuring Phonon Dispersion and Electron-Phason Coupling in Twisted Bilayer Graphene with a Cryogenic Quantum Twisting Microscope
• Ultrafast coherent interlayer phonon dynamics in atomically thin layers of MnBi2Te4
• Bandstructure and Contact Resistance of Carbon Nanotubes Deformed by the Metal Contact
• The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite
• A short account of thermoelectric film characterization techniques
• Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
• Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
• Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
• Electron-phonon scattering and in-plane electric conductivity in twisted bilayer graphene
• Electronic structure of carbon nanotubes on graphene substrates
• Interlayer Resistance of Misoriented MoS2
• Temperature Dependent Layer Breathing Modes in Two Dimensional Materials
• Inter-ribbon tunneling in graphene: an atomistic Bardeen approach
• Mesoscopic Electronic Transport in Twisted Bilayer Graphene
• An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction
• Evidence for Phonon-Assisted Intertube Electronic Transport in an Armchair Carbon Nanotube Film
• Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
• Optical Properties of Graphene in Magnetic and Electric fields
• Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
• Perpendicular electronic transport and moiré-induced resonance in twisted interfaces of three-dimensional graphite