The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite

Abstract

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$\Omega \mu {\mathrm{m}}^2$. For small rotation angles, the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neutrality point. Over a range of intermediate angles, the resistance increases exponentially with cell size for minimum size unit cells. Larger cell sizes, of similar angles, may not follow this trend. The energy dependence of the interlayer transmission is described.

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• The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite

Cited by in corpus (6)

• The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite
• Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
• Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
• Interlayer Resistance of Misoriented MoS2
• Perpendicular electronic transport and moiré-induced resonance in twisted interfaces of three-dimensional graphite
• Transport gap in vertical devices made of incommensurately misoriented graphene layers