Weak antilocalization in epitaxial graphene: evidence for chiral electrons

Abstract

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak anti-localization in 2D samples manifests itself as a broad cusp-like depression in the longitudinal resistance for magnetic fields 10 mT$<B<$ 5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov-de Haas oscillations are remarkably small and show an anomalous Berry's phase.

5 pages, 4 figures. Minor changes

References in corpus (6)

• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Unconventional Integer Quantum Hall effect in graphene
• Weak localisation magnetoresistance and valley symmetry in graphene
• Quantum transport of massless Dirac fermions in graphene
• Effect of Disorder on Transport in Graphene
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Cited by in corpus (25)

• The electronic properties of graphene
• Epitaxial graphene
• Approaching the Dirac point in high mobility multi-layer epitaxial graphene
• Infrared spectroscopy of Landau levels in graphene
• Weak localisation in graphene flakes
• AC conductivity of graphene: from tight-binding model to 2+1-dimensional quantum electrodynamics
• Midgap states and charge inhomogeneities in corrugated graphene
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
• Topological delocalization of two-dimensional massless Dirac fermions
• Perfectly Conducting Channel and Universality Crossover in Disordered Nano-Graphene Ribbons
• Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
• Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene
• Effect of electron-electron interactions on the conductivity of clean graphene
• Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale
• Morphology of graphene thin film growth on SiC(0001)
• Conductance asymmetry of graphene pn junction
• Character of electronic states in graphene antidot lattices: Flat bands and spatial localization
• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• Transport through normal metal - graphene contacts
• Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density
• Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point
• Electron delocalization in bilayer graphene induced by an electric field
• Dirac fermions in a power-law-correlated random vector potential
• Contact conductance between graphene and quantum wires