Anti-localization of graphene under substrate electric field

Abstract

A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo) time-reversal operations show that the number of effective internal degrees of freedom, such as spin and pseudo-spins distinguishing the sublattice and the valley, is the crucial parameter for localization. It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

4 pages, 2 figures

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Cited by in corpus (10)

• The electronic properties of bilayer graphene
• Competition between weak localization and antilocalization in topological surface states
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Magneto-transport in Disordered Graphene: from Weak Localization to Strong Localization
• z/-z Symmetry of spin-orbit coupling and weak localization in graphene
• Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions
• Magnetoresistance in Disordered Graphene: The Role of Pseudospin and Dimensionality Effects Unraveled
• Disorder-Induced Multiple Transition involving Z2 Topological Insulator
• Criticality of the metal-topological insulator transition driven by disorder
• Quarter-Metal Phases in Multilayer Graphene: Ising-XY and Annular Lifshitz Transitions