Irradiation-induced metal-insulator transition in monolayer graphene
arXiv:1907.10472
Abstract
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when the conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR. Theoretical analysis is in a good agreement with experimental data.
arXiv comment25 pages, pdf. arXiv admin note: text overlap with arXiv:1507.01429
References in corpus (19)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Control of graphene's properties by reversible hydrogenation
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping
- Defect scattering in graphene
- Weak antilocalization in epitaxial graphene: evidence for chiral electrons
- Efros-Shklovskii variable range hopping in reduced graphene oxide sheets of varying carbon sp2 fraction
- Colossal negative magnetoresistance in dilute fluorinated graphene
- Magneto-transport in Disordered Graphene: from Weak Localization to Strong Localization
- Manifestation of electron-electron interaction in the magnetoresistance of graphene
- Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies
- Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential
- Raman scattering and electrical resistance of highly disordered graphene
- Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation
- Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity
- Hopping magnetoresistance in ion irradiated monolayer graphene