128 citations · 288 across the 8 of their papers we have counts for
8 papers
Irradiation-induced metal-insulator transition in monolayer graphene
I. Shlimak, E. Zion, A. Butenko +5
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. D…
Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions
A. Butenko, E. Zion, Yu. Kaganovskii +6
The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer g…
Effect of annealing on Raman scattering spectra of monolayer graphene samples gradually disordered by ion irradiation
E. Zion, A. Butenko, Yu. Kaganovskii +6
The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C and Xe ions were measured after annealing in high vacuu…
Hopping magnetoresistance in ion irradiated monolayer graphene
I. Shlimak, E. Zion, A. V. Butenko +8
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to K in…
Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation
E. Zion, A. Haran, A. V. Butenko +9
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different do…
Raman scattering and electrical resistance of highly disordered graphene
I. Shlimak, A. Haran, E. Zion +9
Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography…
Diamond Processing by Focused Ion Beam - Surface Damage and Recovery
Igal Bayn, Asaf Bolker, Catherine Cytermann +4
The Nitrogen Vacancy color center (NV-) in diamond is of great interest for novel photonic applications. Diamond nano-photonic structures are often implemented using Focused-Ion-Be…
Increasing the coherence time of single electron spins in diamond by high temperature annealing
Boris Naydenov, Friedemann Reinhard, Anke Lämmle +6
Negatively charged Nitrogen-Vacancy (NV) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe…