Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity

Abstract

Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is accompanied in strong magnetic fields by a substantial change in the character of the temperature dependence of the conductivity. This implies that spins play an important role in 2D VRH conductivity because the processes of orbital origin are not relevant to the observed effect. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.

10 pages, 4 jpeg figures

References in corpus (1)

• Experimental Evidence for a Coulomb Gap in Two Dimensions

Cited by in corpus (8)

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• Metal-insulator transition in 2D: a role of the upper Habbard band
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• Irradiation-induced metal-insulator transition in monolayer graphene