activity
20042011
most citedUltrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

3.5k citations · 5.6k across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2011★ 472 cited

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Walt. A. de Heer, Claire Berger, Ming Ruan +6

After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a ne…

cond-mat.mtrl-sci2009★ 35 cited

Top and side gated epitaxial graphene field effect transistors

Xuebin Li, Xiaosong Wu, Mike Sprinkle +5

Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the c…

cond-mat.mtrl-sci2008★ 4 cited

Hot Dirac Fermions in Epitaxial Graphene

Dong Sun, Zong-Kwei Wu, Charles Divin +5

We investigate the ultrafast relaxation dynamics of hot Dirac fermionic quasiparticles in multilayer epitaxial graphene using ultrafast optical differential transmission spectrosco…

cond-mat.mes-hall2007★ 320 cited

The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics

Xiaosong Wu, Mike Sprinkle, Xuebin Li +3

Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the pre…

cond-mat.mes-hall2007★ 875 cited

Epitaxial graphene

Walt A. de Heer, Claire Berger, Xiaosong Wu +9

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to t…

cond-mat.mes-hall2006★ 363 cited

Weak antilocalization in epitaxial graphene: evidence for chiral electrons

Xiaosong Wu, Xuebin Li, Zhimin Song +2

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak anti-localization in 2D samples manifests itself…