Top and side gated epitaxial graphene field effect transistors
arXiv:0908.0017 · doi:10.1002/pssa.200982453
Abstract
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side gate FET structures are promising.
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Cited by in corpus (9)
- Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
- Directed self-organization of graphene nanoribbons on SiC
- Epitaxial Graphene Electronic Structure And Transport
- Electronic and optical properties of graphene nanoribbons in external fields
- Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
- Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
- Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates
- Visualisation of edge effects in side-gated graphene nanodevices
- Graphene Side Gate Engineering