Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

Abstract

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.

4 pages, 3 figures

References in corpus (19)

• Electric Field Effect in Atomically Thin Carbon Films
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Graphene: Status and Prospects
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• A Graphene Field-Effect Device
• Observation of the Fractional Quantum Hall Effect in Graphene
• Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
• Transport measurements across a tunable potential barrier in graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
• Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
• Fabrication of Graphene p-n-p Junctions with Contactless Top Gates
• Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
• Local gating of a graphene Hall bar by graphene side gates
• Top and side gated epitaxial graphene field effect transistors
• Phase coherent transport in a side-gated mesoscopic graphite wire

Cited by in corpus (9)

• Dielectric Engineered Tunnel Field-Effect Transistor
• Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
• Plasmonic excitations in Coulomb coupled N-layer graphene structures
• Scaling Theory of Electrically Doped 2D Transistors
• Can Tunnel Transistors Scale Below 10nm?
• Design Rules for High Performance Tunnel Transistors from 2D Materials
• Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions
• Graphene Side Gate Engineering
• Hybrid Pass Transistor Logic with Ambipolar Transistors