Design Rules for High Performance Tunnel Transistors from 2D Materials
arXiv:1603.09402 · doi:10.1109/JEDS.2016.2568219
Abstract
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical doping. In this work, design guidelines for both electrically and chemically doped 2D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness (EOT) are studied. Later on, these performance boosters are analyzed within a novel figure-of-merit plot (i.e. constant ON-current plot).
5 pages, 8 figures
References in corpus (8)
- Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
- Dielectric Engineered Tunnel Field-Effect Transistor
- Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
- Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates
- Scaling Theory of Electrically Doped 2D Transistors
- Can Tunnel Transistors Scale Below 10nm?
- A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations