197 citations · 1.3k across the 30 of their papers we have counts for
30 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…
Quantum-Kit: Simulating Shor's Factorization of 24-Bit Number on Desktop
Archana Tankasala, Hesameddin Ilatikhameneh
Quantum-Kit is a graphical desktop application for quantum circuit simulations. Its powerful, memory-efficient computational engine enables large-scale simulations on a desktop. Th…
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are…
Switching Mechanism and the Scalability of vertical-TFETs
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +2
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by…
Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors
Jun Z. Huang, Hesameddin Ilatikhameneh, Michael Povolotskyi +1
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numer…
Sensitivity Challenge of Steep Transistors
Hesameddin Ilatikhameneh, Tarek Ameen, ChinYi Chen +2
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally h…
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu +1
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials.…
Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
Tarek A. Ameen, Hesameddin Ilatikhameneh, Jun Z. Huang +3
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numeric…
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have bo…
Impact of Dimensionality on PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is invest…
Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen +2
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D ma…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
Design Rules for High Performance Tunnel Transistors from 2D Materials
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods t…
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Tarek A. Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck +1
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excell…
Can Tunnel Transistors Scale Below 10nm?
Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman
The main promise of tunnel FETs (TFETs) is to enable supply voltage () scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, re…
From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
Hesameddin Ilatikhameneh, Ramon B. Salazar, Gerhard Klimeck +2
In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (T…
Universal Behavior of Strain in Quantum Dots
Hesameddin Ilatikhameneh, Tarek Ameen, Gerhard Klimeck +1
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universa…
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck +2
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deter…
Dielectric Engineered Tunnel Field-Effect Transistor
Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck +2
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics…
A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations
Ramon B. Salazar, Hesameddin Ilatikhameneh, Rajib Rahman +2
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-tra…
Scaling Theory of Electrically Doped 2D Transistors
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the co…