92 citations · 109 across the 3 of their papers we have counts for
7 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…
Quantum-Kit: Simulating Shor's Factorization of 24-Bit Number on Desktop
Archana Tankasala, Hesameddin Ilatikhameneh
Quantum-Kit is a graphical desktop application for quantum circuit simulations. Its powerful, memory-efficient computational engine enables large-scale simulations on a desktop. Th…
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are…
Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors
Jun Z. Huang, Hesameddin Ilatikhameneh, Michael Povolotskyi +1
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numer…
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu +1
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials.…