Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass

Abstract

Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, and worsens power dissipation. Fortunately, the emergence of novel classes of materials with exotic properties in recent times has opened up new avenues in device design. Here, we show that by using channel materials with an anisotropic effective mass, the channel can be scaled down to 1nm and still provide an excellent switching performance in both MOSFETs and TFETs. In the case of TFETs, a novel design has been proposed to take advantage of anisotropic mass in both ON- and OFF-state of the TFETs. Full-band atomistic quantum transport simulations of phosphorene nanoribbon MOSFETs and TFETs based on the new design have been performed as a proof.

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Cited by in corpus (12)

• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
• Switching Mechanism and the Scalability of vertical-TFETs
• Intrinsically shunted Josephson junctions for electronics applications
• How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS${}_2$ Transistors?
• Sensitivity Challenge of Steep Transistors
• Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
• Channel thickness optimization for ultra thin and 2D chemically doped TFETs
• Hydrodynamic signatures in thermal transport in devices based on 2D materials: an ab initio study
• BTE-Barna: An extension of almaBTE for thermal simulation of devices based on 2D materials
• Design and realization of Ohmic and Schottky interfaces for oxide electronics
• Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-effect Transistors
• Transport and relaxation of current-generated nonequilibrium phonons from nonlocal electronic measurements