Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Abstract

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m*) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0-0.4 eV, 2) light transport m* (0.15m0), 3) anisotropic m* which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION 1 mA/um, ON/OFF ratio~1e6, scalability to 6 nm channel length and 0.2 V supply voltage, thereby significantly outperforming the best TMD-TFETs in energy-delay products. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-eficient and scalable replacements of MOSFETs.

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Cited by in corpus (11)

• Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Switching Mechanism and the Scalability of vertical-TFETs
• Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
• Sensitivity Challenge of Steep Transistors
• Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
• Phosphorene pnp junctions as perfect electron waveguides
• Channel thickness optimization for ultra thin and 2D chemically doped TFETs
• Conditions for the occurrence of Coulomb blockade in phosphorene quantum dots at room temperature
• Doping profile engineered triple heterojunction TFETs with 12 nm body thickness