Efficient and realistic device modeling from atomic detail to the nanoscale

Abstract

As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena. This article seeks to provide updates on the current status of the tool and new functionality, including advances in quantum transport simulations and with materials such as metals, topological insulators, and piezoelectrics.

10 pages, 12 figures

References in corpus (2)

• Topological Insulators with Inversion Symmetry
• Direct Measurement of the Out-of-Plane Spin Texture in the Dirac Cone Surface State of a Topological Insulator

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• Design Rules for High Performance Tunnel Transistors from 2D Materials
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• Sensitivity Challenge of Steep Transistors
• General Green's function formalism for layered systems: Wave function approach
• A general algorithm for computing bound states in infinite tight-binding systems
• Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts
• Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
• Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
• Channel thickness optimization for ultra thin and 2D chemically doped TFETs
• Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green's function implementations
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• Universal Behavior of Strain in Quantum Dots
• Transport in vertically stacked hetero-structures from 2D materials
• Anisotropic strain in SmSe and SmTe: implications for electronic transport
• An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance
• Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface and edge states of topological insulator nanostructures
• Performance degradation of superlattice MOSFETs due to scattering in the contacts
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• Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
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