96 citations · 520 across the 27 of their papers we have counts for
27 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Tingting Shen, Daniel Valencia, Qingxiao Wang +6
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electr…
Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors
Jun Z. Huang, Hesameddin Ilatikhameneh, Michael Povolotskyi +1
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numer…
Optimization of edge state velocity in the integer quantum Hall regime
Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura +5
Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point cont…
Control of interlayer delocalization in 2H transition metal dichalcogenides
Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective…
Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
Tarek A. Ameen, Hesameddin Ilatikhameneh, Jun Z. Huang +3
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numeric…
Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network
Daniel Valencia, Evan Wilson, Zhengping Jiang +3
Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model…
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have bo…
Performance degradation of superlattice MOSFETs due to scattering in the contacts
Pengyu Long, Jun Huang, Zhengping Jiang +3
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec.…
Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing…
P-Type Tunnel FETs With Triple Heterojunctions
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the ch…
High-Performance Complementary III-V Tunnel FETs with Strain Engineering
Jun Z. Huang, Yu Wang, Pengyu Long +3
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…
Transferable tight binding model for strained group IV and III-V materials and heterostructures
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +2
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with neares…
Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
Jun Z. Huang, Lining Zhang, Pengyu Long +2
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Th…
NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law
Robert Andrawis, Jose David Bermeo, James Charles +12
Electronic performance predictions of modern nanotransistors require nonequilibrium Green's functions including incoherent scattering on phonons as well as inclusion of random allo…
Surface Passivation in Empirical Tight Binding
Yu He, Yaohua Tan, Zhengping Jiang +3
Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that expli…
Transferable tight binding model for strained group IV and III-V heterostructures
Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis +2
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding p…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…
Anisotropic strain in SmSe and SmTe: implications for electronic transport
Marcelo A. Kuroda, Zhengping Jiang, Michael Povolotskyi +3
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress indu…
Brillouin zone unfolding method for effective phonon spectra
Timothy B. Boykin, Arvind Ajoy, Hesameddin Ilatikhameneh +2
Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure materi…
An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance
Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis +2
The Semi-Empirical TB model developed in part I is applied to metal transport problems of current relevance in part II. A systematic study of the effect of quantum confinement, tra…
An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and Validation
Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis +2
Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor device…
Efficient and realistic device modeling from atomic detail to the nanoscale
J. E. Fonseca, T. Kubis, M. Povolotskyi +8
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for compre…