activity
20122020
most citedEfficient and realistic device modeling from atomic detail to the nanoscale

96 citations · 520 across the 27 of their papers we have counts for

collaborators
Showing 2017Show all

6 papers · 1 filter

cond-mat.mes-hall2017★ 16 cited

Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors

Jun Z. Huang, Hesameddin Ilatikhameneh, Michael Povolotskyi +1

Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numer…

cond-mat.mes-hall2017★ 16 cited

Optimization of edge state velocity in the integer quantum Hall regime

Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura +5

Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point cont…

cond-mat.mes-hall2017★ 30 cited

Control of interlayer delocalization in 2H transition metal dichalcogenides

Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective…

cond-mat.mes-hall2017★ 17 cited

Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions

Tarek A. Ameen, Hesameddin Ilatikhameneh, Jun Z. Huang +3

Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numeric…

cond-mat.mtrl-sci2017★ 29 cited

Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network

Daniel Valencia, Evan Wilson, Zhengping Jiang +3

Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model…

cond-mat.mes-hall2017★ 17 cited

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs

Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5

A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have bo…