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An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance
Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis +2
The Semi-Empirical TB model developed in part I is applied to metal transport problems of current relevance in part II. A systematic study of the effect of quantum confinement, tra…
An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and Validation
Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis +2
Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor device…
Efficient and realistic device modeling from atomic detail to the nanoscale
J. E. Fonseca, T. Kubis, M. Povolotskyi +8
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for compre…
Engineering Nanowire n-MOSFETs at Lg < 8 nm
Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis +3
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major perfo…
Design principles for HgTe based topological insulator devices
Parijat Sengupta, Tillmann Kubis, Yaohua Tan +2
The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical…