Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
arXiv:1702.01248 · doi:10.1109/TED.2017.2690626
Abstract
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numerical modeling of such effects requires combining the non-equilibrium coherent quantum transport through tunnel junction, as well as the quasi-equilibrium statistics arising from the strong scattering in the induced quantum wells. In this work, a novel atomistic model is proposed to include both effects: the strong scattering in the regions around THJ and the coherent tunneling. The new model matches reasonably well with experimental measurements of Nitride THJ and provides an efficient engineering tool for performance prediction and design of THJ based devices.
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- Doping profile engineered triple heterojunction TFETs with 12 nm body thickness