106 citations · 430 across the 13 of their papers we have counts for
13 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are…
Sensitivity Challenge of Steep Transistors
Hesameddin Ilatikhameneh, Tarek Ameen, ChinYi Chen +2
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally h…
Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
Tarek A. Ameen, Hesameddin Ilatikhameneh, Jun Z. Huang +3
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numeric…
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have bo…
Impact of Dimensionality on PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen +2
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D ma…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Tarek A. Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck +1
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excell…
Universal Behavior of Strain in Quantum Dots
Hesameddin Ilatikhameneh, Tarek Ameen, Gerhard Klimeck +1
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universa…
Dielectric Engineered Tunnel Field-Effect Transistor
Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck +2
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…