106 citations · 430 across the 13 of their papers we have counts for
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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Tarek A. Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck +1
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excell…
Universal Behavior of Strain in Quantum Dots
Hesameddin Ilatikhameneh, Tarek Ameen, Gerhard Klimeck +1
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universa…
Dielectric Engineered Tunnel Field-Effect Transistor
Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck +2
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…