Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Abstract

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

7 pages, 8 figures. The revised version is uploaded

References in corpus (1)

• Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Cited by in corpus (25)

• A microprocessor based on a two-dimensional semiconductor
• Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
• Dielectric Engineered Tunnel Field-Effect Transistor
• Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs
• Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
• Switching Mechanism and the Scalability of vertical-TFETs
• Scaling Theory of Electrically Doped 2D Transistors
• First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
• Can Tunnel Transistors Scale Below 10nm?
• Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
• Uniform Benchmarking of Low Voltage Van Der Waals FETs
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
• Control of interlayer delocalization in 2H transition metal dichalcogenides
• A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations
• Design Rules for High Performance Tunnel Transistors from 2D Materials
• High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions
• Sensitivity Challenge of Steep Transistors
• Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
• Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
• Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
• Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green's function implementations
• Transport in vertically stacked hetero-structures from 2D materials