High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

Abstract

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analysed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low sub-threshold swings (below 5mV/decade) and Ion/Ioff ratios higher than 1e8 at a supply voltage of 0.3V, making them ideal for ultra-low power consumption.

arXiv comment10 pages

References in corpus (13)

• First-principles study of the phonon-limited mobility in n-type single-layer MoS2
• Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
• Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
• Chemical assembly of atomically thin transistors and circuits in a large scale
• \textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides
• Parallel Stitching of Two-Dimensional Materials
• Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
• Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
• Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor
• Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
• Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band

Cited by in corpus (7)

• Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides
• Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform
• A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode
• Spin polarization in Lateral two-dimensional Heterostructures
• Interface Dark Excitons at Sharp Lateral Two-Dimensional Heterostructures