paper

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

arXiv:1406.2439 · doi:10.1021/nl501278c

Abstract

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si/SiO. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10m combined with carrier mobilities exceeding 20,000 cm/Vs.

15 pages, 5 figures

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