Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
arXiv:1406.2439 · doi:10.1021/nl501278c
Abstract
We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si/SiO. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10m combined with carrier mobilities exceeding 20,000 cm/Vs.
15 pages, 5 figures
References in corpus (15)
- Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Colloquium: The transport properties of graphene: An introduction
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
- Tunneling Spin Injection into Single Layer Graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Raman imaging of doping domains in graphene on SiO2
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
- Spin transport in high quality suspended graphene devices
- Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
- Spin Relaxation in Single Layer Graphene with Tunable Mobility
- Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
- Electron spin diffusion and transport in graphene
- Bias-dependent D'yakonov-Perel' spin relaxation in bilayer graphene
Cited by in corpus (24)
- Graphene Spintronics
- Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
- Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
- Large-scale BN tunnel barriers for graphene spintronics
- Giant proximity exchange and valley splitting in transition metal dichalcogenide//(Co, Ni) heterostructures
- Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
- Room temperature manipulation of long lifetime spins in metallic-like carbon nanospheres
- Twist Angle Controlled Collinear Edelstein Effect in van der Waals Heterostructures
- Direct Observation of Unusual Interfacial Dzyaloshinskii-Moriya Interaction in Graphene/NiFe/Ta Heterostructure
- Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties
- Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
- Spin transport in graphene nanostructures
- Charge carrier density-dependent Raman spectra of graphene encapsulated in hexagonal boron nitride
- Ultralong spin lifetime in light alkali atom doped graphene
- Electron spin dynamics of two-dimensional layered materials
- Dry-transferred CVD graphene for inverted spin valve devices
- Spintronics in 2D graphene-based van der Waals heterostructures
- Spin Relaxation at Graphene Nanoribbons in the presence of Substrate Surface Roughness
- Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
- Spin imaging of Poiseuille flow of viscous electronic fluid
- Electric field tunable spin-orbit gap in a bilayer graphene/WSe quantum dot
- Spin drag mechanism of giant thermal magnetoresistance
- Spin-caloric resistance of Dirac plasma in a graphene Corbino device
- Pre-Patterned Superconducting Contacts for Clean Superconductor-Topological Material Interfaces Enabling Long-Range Josephson Coupling