Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction
arXiv:1606.05571 · doi:10.1103/PhysRevApplied.7.024011
Abstract
We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a carbon nanotube (CNT) spin valve in terms of the influence of the CNT-contact interface on the performance of the device. The focus is on the strength and the spin selectivity of the tunnel barriers that are modelled as Dirac-delta potentials. The scattering matrix approach is used to derive the transmission coefficient that yields the tunneling magnetoresistance (TMR). We find a strong non-trivial gate-voltage response of the TMR in the absence of spin-orbit coupling when the energy of the incident electrons matches the potential energy of the barrier. Analytic expressions for the TMR in various limiting cases are derived. These are used to explain previous experimental results, but also to predict parameters for device optimization with respect to size and tunability of the TMR effect in the ballistic transport regime.
16 pages with 10 figures, version as accepted for publication
References in corpus (14)
- Graphene Spintronics
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Tunneling Spin Injection into Single Layer Graphene
- Coherent coupling of a single spin to microwave cavity photons
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
- Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
- Large spin-orbit coupling in carbon nanotubes
- Nanospintronics with carbon nanotubes
- Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers
- Spin-orbit interaction in chiral carbon nanotubes probed in pulsed magnetic fields
- Sample-specific and Ensemble-averaged Magnetoconductance of Individual Single-Wall Carbon Nanotubes
- Rashba spin-orbit coupling and spin precession in carbon nanotubes
- Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes