Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field

Abstract

We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 $\mu$m even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is ${\tau }_{\perp }/{\tau }_{||}\approx$ 0.75 for zero applied perpendicular electric field. By tuning the electric field this anisotropy changes to $\approx$0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.

References in corpus (6)

• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Spin transport in high quality suspended graphene devices
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• Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions
• Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
• Revisiting the measurement of the spin relaxation time in graphene-based devices
• Spin transport in high-mobility graphene on WS${}_2$ substrate with electric-field tunable proximity spin-orbit interaction
• Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
• Direct Observation of Unusual Interfacial Dzyaloshinskii-Moriya Interaction in Graphene/NiFe/Ta Heterostructure
• Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties
• Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
• Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
• Observation of spin-charge conversion in CVD-grown single-layer graphene
• Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
• Anisotropic Hanle lineshape via anisotropic magnetothermoelectric phenomena
• Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces
• Spin transport in graphene nanostructures
• Ultralong spin lifetime in light alkali atom doped graphene
• Dry-transferred CVD graphene for inverted spin valve devices
• Electron spin dynamics of two-dimensional layered materials
• Spin Relaxation at Graphene Nanoribbons in the presence of Substrate Surface Roughness
• Circuit-Model Analysis for Spintronic Devices with Chiral Molecules as Spin Injectors