Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature

Abstract

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect raises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications.

12 pages, 4 figures, supporting information

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• Omnidirectional spin-to-charge conversion in graphene/NbSe${}_2$ van der Waals heterostructures
• A seamless graphene spin valve based on proximity to van der Waals magnet Cr${}_2$Ge${}_2$Te${}_6$
• Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide
• Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current
• Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design
• Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
• Oblique spin injection to graphene via geometry controlled magnetic nanowires
• Spin-Hall Current and Nonlocal Transport in Ferromagnet-Free Multi-band models for SrTiO3-Based Nanodevices in the presence of impurities
• The spin Hall effect
• Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves
• Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature