Contact induced spin relaxation in Hanle spin precession measurements
arXiv:1210.0093 · doi:10.1103/PhysRevB.86.235408
Abstract
In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements.
9 pages, 7 figures
References in corpus (7)
- Tunneling Spin Injection into Single Layer Graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Manipulation of Spin Transport in Graphene by Surface Chemical Doping
- Spin transport in high quality suspended graphene devices
- Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
- Spin relaxation times in disordered graphene
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