Electron spin relaxation in bilayer graphene
arXiv:1302.5880 · doi:10.1103/PhysRevB.87.205416
Abstract
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the parameters obtained by fitting to the numerical calculation according to the latest report by Konschuh {\it et al.} [Phys. Rev. B {\bf 85}, 115423 (2012)] from first principles. In contrast to single-layer graphene, the leading term of the out-of-plane component of the spin-orbit coupling in bilayer graphene shows a Zeeman-like term with opposite effective magnetic fields in the two valleys. This Zeeman-like term opens a spin relaxation channel in the presence of intervalley scattering. It is shown that the intervalley electron-phonon scattering, which has not been reported in the previous literature, strongly suppresses the in-plane spin relaxation time at high temperature whereas the intervalley short-range scattering plays an important role in the in-plane spin relaxation especially at low temperature. A marked nonmonotonic dependence of the in-plane spin relaxation time on temperature with a minimum of several hundred picoseconds is predicted in the absence of the short-range scatterers. This minimum is comparable to the experimental data. Moreover, a peak in the electron density dependence of the in-plane spin relaxation time at low temperature, which is very different from the one in semiconductors, is predicted. We also find a rapid decrease in the in-plane spin relaxation time with increasing initial spin polarization at low temperature, which is opposite to the situation in both semiconductors and single-layer graphene. ......(The remaining is cut due to the limit of space)
15 pages, 9 figures, PRB in press
References in corpus (50)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Dielectric function, screening, and plasmons in 2D graphene
- Andreev reflection and Klein tunneling in graphene
- Carrier transport in 2D graphene layers
- A self-consistent theory for graphene transport
- The electronic properties of bilayer graphene
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Dynamical polarization of graphene at finite doping
- Spin qubits in graphene quantum dots
- Colloquium: The transport properties of graphene: An introduction
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Spin-orbit gap of graphene: First-principles calculations
- Strong suppression of weak (anti)localization in graphene
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Substrate limited electron dynamics in graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Tunneling Spin Injection into Single Layer Graphene
- Electronic properties of bilayer and multilayer graphene
- Graphene Spin Transistor
- Electron Transport and Hot Phonons in Carbon Nanotubes
- Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
- Electron-phonon heat transfer in monolayer and bilayer graphene
- Manipulation of Spin Transport in Graphene by Surface Chemical Doping
- Electronic spin drift in graphene field effect transistors
- Spin Transport and Relaxation in Graphene
- Theory of spin-orbit coupling in bilayer graphene
- Hyperfine interaction and electron-spin decoherence in graphene and carbon nanotube quantum dots
- Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
- High temperature spin dephasing in n-typed GaAs quantum wells
- Contact induced spin relaxation in Hanle spin precession measurements
- Spin-orbit coupling in a graphene bilayer and in graphite
- Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
- Electron spin relaxation in graphene with random Rashba field: Comparison of D'yakonov-Perel' and Elliott-Yafet--like mechanisms
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Transport in suspended graphene
- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
- Curvature-induced spin-orbit coupling and spin relaxation in a chemically clean single-layer graphene
- Multi-subband effect in spin dephasing in semiconductor quantum wells
- Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
- Electron spin diffusion and transport in graphene
- Hopping-resolved electron-phonon coupling in bilayer graphene
- Intrinsic and substrate induced spin-orbit interaction in chirally stacked trilayer graphene
- Electrical Control of Dynamic Spin Splitting Induced by Exchange Interaction as Revealed by Time Resolved Kerr Rotation in a Degenerate Spin-Polarized Electron Gas
- Bias-dependent D'yakonov-Perel' spin relaxation in bilayer graphene
- Spin dynamics in high-mobility two-dimensional electron systems
- Electron spin relaxation in rippled graphene with low mobilities
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- Observation of spin-valley coupling induced large spin lifetime anisotropy in bilayer graphene
- Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS
- Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene
- Optical spin injection in graphene with Rashba spin-orbit interaction
- Electron spin diffusion in monolayer MoS
- A novel superconducting-velocity--tunable quasiparticle state and spin relaxation in GaAs (100) quantum wells in proximity to -wave superconductor
- Phonon-limited valley life times in single-particle bilayer graphene quantum dots