Electron spin diffusion and transport in graphene

Abstract

We investigate the spin diffusion and transport in a graphene monolayer on SiO${}_2$ substrate by means of the microscopic kinetic spin Bloch equation approach. The substrate causes a strong Rashba spin-orbit coupling field $\sim 0.15$ meV, which might be accounted for by the impurities initially present in the substrate or even the substrate-induced structure distortion. By surface chemical doping with Au atoms, this Rashba spin-orbit coupling is further strengthened as the adatoms can distort the graphene lattice from $s{p}^2$ to $s{p}^3$ bonding structure. By fitting the Au doping dependence of spin relaxation from Pi {\sl et al.} [Phys. Rev. Lett. {\bf 104}, 187201 (2010)], the Rashba spin-orbit coupling coefficient is found to increase approximately linearly from 0.15 to 0.23 meV with the increase of Au density. With this strong spin-orbit coupling, the spin diffusion or transport length is comparable with the experimental values. In the strong scattering limit (dominated by the electron-impurity scattering in our study), the spin diffusion is uniquely determined by the Rashba spin-orbit coupling strength and insensitive to the temperature, electron density as well as scattering. With the presence of an electric field along the spin injection direction, the spin transport length can be modulated by either the electric field or the electron density. (The remaining is omitted due to the limit of space)

14 pages, 7 figures, to be published in PRB

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• Spin Relaxation in Single Layer Graphene with Tunable Mobility
• Novel valley depolarization dynamics and valley Hall effect of exciton in mono- and bilayer MoS${}_2$
• Curvature-induced spin-orbit coupling and spin relaxation in a chemically clean single-layer graphene
• Dynamics of photoexcited carriers in graphene
• Magnonic Interferometric Switch for Multi-Valued Logic Circuits
• Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene
• Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene
• Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene
• Microscopic theory of ultrafast dynamics of carriers photoexcited by THz and near-infrared linearly-polarized laser pulses in graphene
• Electron spin diffusion in monolayer MoS${}_2$
• Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves
• Electron spin relaxation in bilayer graphene
• A novel superconducting-velocity--tunable quasiparticle state and spin relaxation in GaAs (100) quantum wells in proximity to $s$-wave superconductor
• Electron spin relaxation in rippled graphene with low mobilities
• Spin diffusion in p-type bilayer WSe${}_2$
• Theory of spin-charge-coupled transport in proximitized graphene: An SO(5) algebraic approach
• Electron spin diffusion at the interface of multiferroic oxides
• Spin diffusion in ultracold spin-orbit coupled ${}^{40}$K gas
• Spin diffusion in $n$-type (111) GaAs quantum wells
• Diffusion of photoexcited carriers in graphene