Diffusion of photoexcited carriers in graphene
arXiv:1210.0632 · doi:10.1063/1.4759034
Abstract
The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of carriers. The spatio-temporal transient optical response on a high-frequency probe beam appears to be strongly dependent on the regime of diffusion and can be used for verification of the elasic relaxation mechanism. Sign flip of the differential transmission coefficient takes place due to interplay of the carrier-induced contribution and weak dynamic conductivity of undoped graphene.
4 pages, 4 figures
References in corpus (11)
- The electronic properties of graphene
- Graphene Photonics and Optoelectronics
- Colloquium: The transport properties of graphene: An introduction
- Voltage and temperature dependencies of conductivity in gated graphene
- Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
- Crossover from quantum to Boltzmann transport in graphene
- Comparison between charge and spin transport in few layer graphene
- Saturation of interband absorption in graphene
- Spatially resolved pump-probe study of single-layer graphene produced by chemical vapor deposition
- Electron spin diffusion and transport in graphene
- Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field