Transient response under ultrafast interband excitation of an intrinsic graphene
arXiv:0912.0423 · doi:10.1103/PhysRevB.81.085421
Abstract
The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation are analyzed. The distributions of carriers are obtained for the limiting cases when carrier-carrier scattering is negligible and when the intercarrier scattering imposes the quasiequilibrium distribution. The transient optical response (differential reflectivity and transmissivity) on a probe radiation and transient photoconductivity (response on a weak dc field) appears to be strongly dependent on the relaxation and recombination dynamics of carriers.
9 pages, 8 figures
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- Microscopic theory of ultrafast dynamics of carriers photoexcited by THz and near-infrared linearly-polarized laser pulses in graphene
- Hot carriers in a bipolar graphene
- Quantum Size Effects in the Terahertz Nonlinear Response of Metallic Armchair Graphene Nanoribbons
- Negative differential transmission in graphene
- Nonperturbative quasiclassical theory of graphene photoconductivity
- Diffusion of photoexcited carriers in graphene