Graphene Spin Valve Devices
arXiv:0704.3165 · doi:10.1109/TMAG.2006.878852
Abstract
Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field effect electrode can modulate the conductivity of these graphene films makes them exciting potential candidates for spin electronic devices.
3 pages, 6 figures
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Cited by in corpus (81)
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- A self-consistent theory for graphene transport
- Emergence of magnetism in graphene materials and nanostructures
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- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Colloquium: Spintronics in graphene and other two-dimensional materials
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- Topology-Scaling Identification of Layered Solids and Stable Exfoliated 2D Materials
- Interference effect on Raman spectrum of graphene on SiO_2/Si
- Spin currents in rough graphene nanoribbons: Universal fluctuations and spin injection
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- Graphene Spin Transistor
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- Electronic spin transport in graphene field effect transistors
- Electronic spin drift in graphene field effect transistors
- Voltage and temperature dependencies of conductivity in gated graphene
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- Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene
- Graphene spintronics: the role of ferromagnetic electrodes
- Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts
- Spintronics with graphene
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- Hyperfine Interactions in Graphene and Related Carbon Nanostructures
- Edge State Magnetism of Single Layer Graphene Nanostructures
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- Theoretical studies of spin-dependent electronic transport in ferromagnetically contacted graphene flakes
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- Asymmetric Coulomb Oscillation and Giant Anisotropic Magnetoresistance in Doped Graphene Nanojunctions
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