Magnetotransport through graphene spin valves

Abstract

We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using Keldysh's nonequilibrium Green's function method we show that, in absence of external magnetic fields, the current-voltage curves are nonlinear. Around zero bias the differential conductance versus bias voltage possesses a strong dip. The zero-bias anomaly in the tunnel magnetoresistance (TMR) is affected strongly by the leads spin polarization. Depending on the value of the bias voltage TMR exhibits a behavior ranging from an insulating to a metallic-type. In presence of a static external magnetic field the differential conductance and TMR as a function of the bias voltage and the strength of the magnetic field show periodic oscillations due to Landau-level crossings. We also inspect the effects of the temperature and the polarization degrees on the differential conductance and TMR.

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• Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation
• High magnetoresistance in graphene nanoribbon heterojunction
• Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads
• Magneto-transport in impurity-doped few-layer graphene spin valve
• Time-dependent magneto-transport in a driven graphene spin valve
• Comment on "Magnetotransport through graphene spin valves" and its following works