Magnetotransport through graphene spin valves
arXiv:0901.2627 · doi:10.1103/PhysRevB.79.045405
Abstract
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using Keldysh's nonequilibrium Green's function method we show that, in absence of external magnetic fields, the current-voltage curves are nonlinear. Around zero bias the differential conductance versus bias voltage possesses a strong dip. The zero-bias anomaly in the tunnel magnetoresistance (TMR) is affected strongly by the leads spin polarization. Depending on the value of the bias voltage TMR exhibits a behavior ranging from an insulating to a metallic-type. In presence of a static external magnetic field the differential conductance and TMR as a function of the bias voltage and the strength of the magnetic field show periodic oscillations due to Landau-level crossings. We also inspect the effects of the temperature and the polarization degrees on the differential conductance and TMR.
References in corpus (10)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Spin-orbit gap of graphene: First-principles calculations
- Graphene Spin Transistor
- Spin Injection into a Graphene Thin Film at Room Temperature
- Spin Current and Current-Induced Spin Transfer Torque in Ferromagnet-Quantum Dot-Ferromagnet Coupled Systems
- Magnetotransport and thermoelectricity in disordered graphene
- Selective Spin Injection Controlled by Electrical way in Ferromagnet/Quantum Dot/Semiconductor system