Spin Injection into a Graphene Thin Film at Room Temperature

Abstract

We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these non-local measurements, an obvious MR effect was observed at room temperature; and the MR effect was ascribed to magnetization reversal of ferromagnetic electrodes. This result is a direct demonstration of spin injection into a graphene thin film. Furthermore, this is the first report of spin injection into molecules at room temperature.

12 pages, 3 figures

References in corpus (3)

• Electric Field Effect in Atomically Thin Carbon Films
• Bipolar supercurrent in graphene
• Electronic measurement and control of spin transport in Silicon

Cited by in corpus (11)

• The electronic properties of graphene
• Spin currents in rough graphene nanoribbons: Universal fluctuations and spin injection
• Electronic spin drift in graphene field effect transistors
• Energy gaps, magnetism, and electric field effects in bilayer graphene nanoribbons
• Controllable spin transport in ferromagnetic graphene junctions
• Electronic properties of graphene and graphene nanoribbons with "pseudo-Rashba" spin-orbit coupling
• Spin-resolved Quantum Interference in Graphene
• MagnetoResistance of graphene-based spin valves
• Transfer Characteristics in Graphene Field-Effect Transistors with Co Contacts
• Magnetotransport through graphene spin valves
• Spin currents and magnetoresistance of graphene-based magnetic junctions