Graphene Spintronics
arXiv:1503.02743 · doi:10.1038/nnano.2014.214
Abstract
The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials.
47 Pages, 6 figures
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Cited by in corpus (28)
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)
- Transition Metal and Vacancy Defect Complexes in Phosphorene: A Spintronic Perspective
- Spin-orbit coupling in fluorinated graphene
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- Graphene nanoflakes in external electric and magnetic in-plane fields
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- Revisiting the measurement of the spin relaxation time in graphene-based devices
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- Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6
- Tight-binding theory of spin-orbit coupling in graphynes
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- Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers