Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Abstract

As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sensors, microwave generators and neuromorphic computing networks. The emergence of two-dimensional (2D) materials brings opportunities for MTJs based on 2D materials which have many attractive characters and advantages. Especially, the recently discovered intrinsic 2D ferromagnetic materials with high spin-polarization hold the promise for next-generation nanoscale MTJs. With the development of advanced 2D materials, many efforts on MTJs with 2D materials have been made both theoretically and experimentally. Various 2D materials, such as semi-metallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2 and some other recently emerged 2D materials are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs, and review the current progress made with 2D MTJs, briefly comment on work with some specific 2D materials, and highlight how they address the current challenges in MTJs, and finally offer an outlook and perspective of 2D MTJs.

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Cited by in corpus (11)

• Room-temperature sub-100 nm Néel-type skyrmions in non-stoichiometric van der Waals ferromagnet $\mathrm{F}{\mathrm{e}}_{3-\mathrm{x}}\mathrm{GaT}{\mathrm{e}}_2$ with ultrafast laser writability
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• A multi-fragment real-time extension of projected density matrix embedding theory: Non-equilibrium electron dynamics in extended systems
• Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions
• Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices
• When Energy and Information Revolutions Meet 2D Janus
• Tailoring coercive fields and the Curie temperature via proximity coupling in WSe${}_2$/Fe${}_3$GeTe${}_2$ van der Waals heterostructures
• Symmetry-controlled SrRuO3/SrTiO3/SrRuO3 magnetic tunnel junctions:Spin polarization and its relevance to tunneling magnetoresistance
• Magnetic and electronic properties of 1D hybrid nanoobjects composed of alternating polycyclic hydrocarbon regions and double carbon chains
• First-principles perspective on full-spectrum infrared photodetectors from doping an excitonic insulator