Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions

Abstract

Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the electronic transport properties of antiferromagnetic-multiferroic tunnel junction (AMFTJ) devices remains largely unexplored. Here, we design an antiferromagnet/ferroelectric barrier/antiferromagnet van der Waals heterojunction, renamed vdW AMFTJ, using a bilayer MnBi${}_2$Te${}_4$/In${}_2$Se${}_3$/bilayer MnBi${}_2$Te${}_4$ (MBT-2L/IS/MBT-2L) as the prototype. Based on first-principles calculations using the nonequilibrium Green's function method combined with density functional theory, we theoretically investigate the spin-resolved electronic transport properties of this AMFTJ. By manipulating the various possible magnetization directions of the multilayer antiferromagnetic MnBi${}_2$Te${}_4$ and the ferroelectric polarization direction of the In${}_2$Se${}_3$ within the junction, sixteen distinct non-volatile resistance states can be revealed and manipulated by applying external biaxial strain and bias voltage. We predict maximum tunneling magnetoresistance (electroresistance) values of $3.79\times 10^4$\% ($2.41\times 10^5$\%) in the equilibrium state, which can increase up to $5.01\times 10^5$\% ($4.97\times 10^5$\%) under external bias voltage. Furthermore, the perfect spin filtering effect is also present in our AMFTJ. Our results highlight the tremendous potential of the MBT-2L/IS/MBT-2L vdW AMFTJ in non-volatile memory, expanding the application avenues for antiferromagnetic spintronic devices.

References in corpus (9)

• Spin Transfer Torques
• Van der Waals Multiferroic Tunnel Junctions
• Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect
• Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions using VS2
• Magnetic field-controlled lattice thermal conductivity in MnBi2Te4
• Thermal and thermoelectric properties of an antiferromagnetic topological insulator MnBi${}_2$Te${}_4$
• Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
• Identifying Axion Insulator by Quantized Magnetoelectric Effect in Antiferromagnetic ${\mathrm{MnBi}}_2{\mathrm{Te}}_4$ Tunnel Junction
• Electrically Controllable van der Waals Antiferromagnetic Spin Valve

Cited by in corpus (2)

• Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
• Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions