activity
20242026
most citedGiant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions using VS2

34 citations · 52 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Interface-Engineered Giant Multistate Resistance Switching in Altermagnetic CrSb Multiferroic Tunnel Junctions

Zhi Yan, Yuwen Hua, Yueting Li +3

Altermagnets enable spin-split transport without stray magnetic fields, yet converting their momentum-dependent spin splitting into a strong tunnel-junction response requires inter…

cond-mat.mtrl-sci2025★ 6 cited

All-electric control of skyrmion-bimeron transition in van der Waals heterostructures

Lan Bo, Songli Dai, Xichao Zhang +4

Two-dimensional van der Waals materials offer a versatile platform for manipulating atomic-scale topological spin textures. In this study, using first-principles and micromagnetic…

cond-mat.mtrl-sci2025

Giant Tunneling Magnetoresistance in Graphene/-BN Based van der Waals Magnetic Tunnel Junctions via 3 Transition Metal Intercalation

Zhi Yan, Jianhua Xiao, Xujin Zhang +2

Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we pro…

cond-mat.mtrl-sci2024★ 12 cited

Magnetic order-dependent giant tunneling magnetoresistance and electroresistance in van der Waals antiferromagnetic-multiferroic tunnel junctions

Zhi Yan, Dan Qiao, Wentian Lu +2

Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magne…

cond-mat.mtrl-sci2024★ 34 cited

Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions using VS2

Zhi Yan, Ruixia Yang, Cheng Fang +2

Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. Howe…